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| AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 specifications). AO6414L is a Green Product ordering option. AO6414 and AO6414L are electrically identical. Features VDS (V) = 55V ID = 2.4A (VGS = 4.5V) RDS(ON) < 160m (VGS = 4.5V) RDS(ON) < 200m (VGS = 2.5V) TSOP-6 Top View D D G 16 25 34 D D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A TA=70C ID Pulsed Drain Current B Maximum 55 12 2.3 1.9 9 1.56 1.1 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 58 94 37 Max 80 120 50 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO6414 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Source leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.4A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=44V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=2.4A TJ=125C 0.6 10 1.3 125 175 157 11 0.78 Min 55 0.002 1 5 100 2 160 210 200 1 1.9 300 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr tD(off) Turn-Off DelayTime Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 214 31 12.6 1.3 2.6 0.6 0.8 2.3 2.4 16.5 2 20 17 3 3.3 VGS=4.5V, VDS=25V, ID=2.4A VGS=10V, VDS=25V, RL=10.4, RGEN=3 IF=2.4A, dI/dt=100A/s IF=2.4A, dI/dt=100A/s 2 30 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0: Nov. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V 8 3.5V 4.5V 2.5V 6 8 VDS=5V 6 ID (A) ID(A) 4 125C 2 VGS=2V 2 25C 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 1 1.25 1.75 2 2.25 VGS(Volts) Figure 2: Transfer Characteristics 1.5 2.5 4 0 200 Normalized On-Resistance 180 VGS=2.5V RDS(ON) (m) 160 140 VGS=4.5V 120 100 0 1 2 3 4 5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=2.4A 1.0E+00 1.0E-01 IS (A) 1.0E-02 25C 1.0E-03 1.0E-04 125C VGS=4.5V, 2.4A VGS=2.5V,1.5A 350 300 250 125C 200 150 100 50 0 2 4 6 8 10 25C RDS(ON) (m) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AO6414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 50 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 20 10.00 ID (Amps) RDS(ON) limited 1.00 10ms 1s DC 0.10 TJ(Max)=150C TA=25C 0.1s 10s 10s Power (W) 100s 1ms 15 10 5 0 0.001 1 10 100 TJ(Max)=150C TA=25C 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=25V ID=2.4A 400 350 Capacitance (pF) 300 250 200 150 100 Coss Crss Ciss 0.01 0.1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=80C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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